دیتاشیت 2SJ661-1E
مشخصات دیتاشیت
| نام دیتاشیت |
2SJ661
|
| حجم فایل |
378.689
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi 2SJ661-1E
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
65W
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Total Gate Charge (Qg@Vgs):
80nC@10V
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
4.36nF@20V
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Continuous Drain Current (Id):
38A
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Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
335pF@20V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
29.5mΩ@10V,19A
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Package:
TO-262
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
38A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
39mOhm @ 19A, 10V
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Vgs(th) (Max) @ Id:
-
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Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
4360pF @ 20V
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FET Feature:
-
-
Power Dissipation (Max):
1.65W (Ta), 65W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-262-3
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Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
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Base Part Number:
2SJ661
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detail:
P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3
